 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C815M3 Issued Date : 2005.03.25 Revised Date : 2005.10.20 Page No. : 1/5 BTB1386M3 Features * Low VCE(sat), VCE(sat)=-0.25 V (typical), at IC / IB = -3A / -60mA * Excellent DC current gain characteristics * Complementary to BTD2098M3 * Pb-free package Symbol BTB1386M3 Outline SOT-89 BBase CCollector EEmitter BCE Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Pd Tj Tstg Limits -30 -20 -6 -5 -10 (Note 1) 0.5 2 (Note 2) 150 -55~+150 Unit V V V A W C C Note : 1. Single Pulse Pw=10ms 2. When mounted on a 40 x40 x0.7 mm ceramic board. BTB1386M3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE fT Cob Min. -30 -20 -6 120 Typ. -0.25 -0.3 -1.0 120 60 Max. -0.5 -0.5 -0.4 -0.5 -1.3 390 Unit V V V A A V V V MHz pF Spec. No. : C815M3 Issued Date : 2005.03.25 Revised Date : 2005.10.20 Page No. : 2/5 Test Conditions IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-25V, IE=0 VEB=-5V, IC=0 IC=-3A, IB=-60mA IC=-4A, IB=-0.1A IC=-3A, IB=-60mA VCE=-2V, IC=-0.5A VCE=-6V, IC=-50mA, f =30MHz VCB=-20V, f =1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% Classification of hFE Rank Range Q 120~270 R 180~390 Ordering Information Device BTB1386M3 Package SOT-89 (Pb-free) Shipping 1000 pcs / Tape & Reel Marking BH BTB1386M3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) VCE=2V Spec. No. : C815M3 Issued Date : 2005.03.25 Revised Date : 2005.10.20 Page No. : 3/5 Saturation Voltage vs Collector Current 10000 VCESAT 1000 IC=100IB IC=40IB IC=50IB Current Gain---HFE 100 VCE=1V 100 IC=30IB 10 1 10 100 1000 10000 Collector Current---IC(mA) 10 1 10 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VBESAT@IC=10IB Output Characteristics 5 Collector Current---IC(A) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 IB=20mA 1000 IB=10mA IB=6mA IB=4mA IB=2mA IB=0 100 1 10 100 1000 Collector Current---IC(mA) 10000 0 2 4 Collector-to-Emitter Voltage---VCE(V) 6 Output Characteristics 9 8 IB=50mA Power Derating Curves 2.5 Power Dissipation---PD(W) Collector Current---IC(A) 7 6 5 4 3 2 1 0 0 IB=25mA IB=20mA IB=15mA IB=10mA IB=5mA IB=0 2 See note 2 on page 1 1.5 1 0.5 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 0 50 100 150 Ambient Temperature---TA() 200 BTB1386M3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C815M3 Issued Date : 2005.03.25 Revised Date : 2005.10.20 Page No. : 4/5 Carrier Tape Dimension BTB1386M3 CYStek Product Specification CYStech Electronics Corp. SOT-89 Dimension A Spec. No. : C815M3 Issued Date : 2005.03.25 Revised Date : 2005.10.20 Page No. : 5/5 Marking: 1 2 C 3 H BH* B D Style: Pin 1. Base 2. Collector 3. Emitter E F G I 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 *: Typical DIM A B C D E Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1386M3 CYStek Product Specification |
Price & Availability of BTB1386M3
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |